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| General Purpose Transistor (PNP) COMCHIP www.comchiptech.com MMBT3906 PNP Silicon Type Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904) Ideal for Medium Power Amplification and Switching SOT-23 .119 (3.0) .110 (2.8) .020 (0.5) Top View .056 (1.40) .047 (1.20) 3 1 COLLECTOR 2 .006 (0.15)max. .006 (0.15) .002 (0.05) 3 1 BASE .037(0.95) .037(0.95) 2 EMITTER .020 (0.5) .020 (0.5) .103 (2.6) .086 (2.2) Dimensions in inches (millimeters) MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Symbol VCEO VCBO VEBO IC Value -40 -40 -5.0 -200 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Unit mW mW/C C/W mW mW/C C/W C RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 - 55 to +150 MDS0306002A .044 (1.10) .035 (0.90) Page 1 General Purpose Transistor ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(3) (IC = -1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -10 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Base Cutoff Current (VCE = -30 Vdc, VEB = -3.0 Vdc) Collector Cutoff Current (VCE = -30 Vdc, VEB = -3.0 Vdc) 1. FR- 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Width 300 s, Duty Cycle 2.0%. COMCHIP www.comchiptech.com Symbol V(BR)CEO Min -40 Max -- Unit Vdc Vdc V(BR)CBO -40 V(BR)EBO -5.0 IBL -- ICEX -- -50 -- Vdc -- nAdc -50 nAdc REM : Thermal Clad is a trademark of the Bergquist Company. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) ON CHARACTERISTICS(3) DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) Collector - Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base - Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Symbol HFE Min 60 80 100 60 30 Max -- -- 300 -- -- Unit -- VCE(sat) -- -- VBE(sat) -0.65 -- -0.85 -0.95 Vdc -0.25 -0.4 Vdc SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -20 Vdc, f = 100 MHz) Output Capacitance (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Small - Signal Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Output Admittance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Noise Figure (IC = -100 mAdc, VCE = -5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) fT 250 Cobo -- Cibo -- hie 2.0 hre 0.1 hfe 100 hoe 3.0 NF -- 4.0 MHz -- pF 4.5 pF 10 k 12 X 10- 4 10 -- 400 mmhos 60 dB SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = -3.0 Vdc, VBE = 0.5 Vdc, IC = -10 mAdc, IB1 = -1.0 mAdc) (VCC = -3.0 Vdc, IC = -10 mAdc, IB1 = IB2 = -1.0 mAdc) td tr ts tf -- -- -- -- 35 ns 35 225 ns 75 3.Pulse Test: Pulse Width i 300 is, Duty Cycle i 2.0%. MDS0306002A Page 2 General Purpose Transistor Rating and Characteristic Curves (MMBT3906) COMCHIP www.comchiptech.com 3V +9.1 V < 1 ns 3V 275 275 10 k 0 < 1 ns +0.5 V 10 k CS < 4 pF* 1N916 10 < t1 < 500 ms t1 CS < 4 pF* 10.6 V 300 ns Duty Cycle = 2% 10.9 V Duty Cycle = 2% * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 7.0 Capacitance (pF) 5000 3000 2000 Cobo Cibo Q, Charge (pC) VCC = 40 V IC/IB = 10 5.0 3.0 2.0 1000 700 500 300 200 100 70 50 QT QA 1.0 0.1 0.2 0.3 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 Reverse Bias (V) 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C, Collector Current (mA) 200 Figure 3. Capacitance 500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 Figure 4. Charge Data 500 300 200 IC/IB = 20 t f , Fall Time (ns) VCC = 40 V IB1 = IB2 100 70 50 30 20 10 7 5 IC/IB = 10 Time (ns) tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I C, Collector Current (mA) I C, Collector Current (mA) Figure 5. Turn - On Time Figure 6. Fall Time MDS0306002A Page 3 General Purpose Transistor Rating and Characteristic Curves (MMBT3906) TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = - 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 5.0 SOURCE RESISTANCE = 200 IC = 1.0 mA 4.0 NF, Noise Figure (dB) COMCHIP www.comchiptech.com W NF, Noise Figure (dB) 12 f = 1.0 kHz IC = 1.0 mA IC = 0.5 mA 8 6 4 2 0 IC = 50 mA IC = 100 mA 10 SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 W SOURCE RESISTANCE = 2.0 k IC = 50 mA 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 1.0 mA 0 0.1 0.2 0.4 1.0 2.0 4.0 10 f, Frequency (kHz) 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 R g, Source Resistance (k OHMS) 40 100 Figure 7. Figure 8. h PARAMETERS (VCE = - 10 Vdc, f = 1.0 kHz, TA = 25C) 300 h oe, Output Admittance ( mmhos) 100 70 50 30 20 200 h fe , DC Current Gain 100 70 50 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 7.0 10 5 0.1 0.2 0.3 2.0 0.5 0.7 1.0 I C, Collector Current (mA) 3.0 5.0 7.0 10 Figure 9. Current Gain 20 h re , Voltage Feedback Ratio (X 10 -4 ) 10 h ie , Input Impedance (k OHMS) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 7.0 5.0 3.0 2.0 Figure 10. Output Admittance 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 I C, Collector Current (mA) 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C, Collector Current (mA) 5.0 7.0 10 Figure 11. Input Impedance MDS0306002A Figure 12. Voltage Feedback Ratio Page 4 General Purpose Transistor Rating and Characteristic Curves (MMBT3906) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C h FE, DC Current Gain (Normalized) COMCHIP www.comchiptech.com VCE = 1.0 V 1.0 0.7 0.5 0.3 0.2 +25C - 55C 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 I C, Collector Current (mA) 10 20 30 50 70 100 200 Figure 13. DC Current Gain 1.0 TJ = 25C VCE , Collector Emitter Voltage (V) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 I B, Base Current (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 14. Collector Saturation Region 1.0 1.0 q V, Temperature Coefficients (mV/C) TJ = 25C VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.8 0.5 0 - 0.5 qVC FOR VCE(sat) +25C TO +125C V, Voltage (V) 0.6 - 55C TO +25C 0.4 VCE(sat) @ IC/IB = 10 +25C TO +125C - 1.0 - 55C TO +25C - 1.5 - 2.0 0.2 qVB FOR VBE(sat) 0 1.0 2.0 5.0 50 10 20 I C, Collector Current (mA) 100 200 0 20 40 60 80 100 120 140 I C, Collector Current (mA) 160 180 200 Figure 15. "ON" Voltages Figure 16. Temperature Coefficients MDS0306002A Page 5 |
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